公开(公告)号：US20230343706A1

公开(公告)日：2023-10-26

申请号：US18158692

申请日：2023-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hauk HAN ,  Seonghun PARK ,  Jeonggil LEE

IPC: H01L23/528 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L23/53266

Abstract: A semiconductor device includes an insulating structure, a first conductive structure in the insulating structure, the first conductive structure including a first conductive layer and a second conductive layer, and a second conductive structure in the insulating structure, the second conductive structure including a first conductive layer of the second conductive structure. A width of the first conductive structure is larger than a width of the second conductive structure. The first conductive layer of the first conductive structure, the second conductive layer of the first conductive structure, and the first conductive layer of the second conductive structure include a same nonmetal element. A concentration of the nonmetal element in the second conductive layer of the first conductive structure is higher than a concentration of the nonmetal element in the first conductive layer of the first conductive structure and first conductive layer of the second conductive structure.

公开(公告)号：US20210104615A1

公开(公告)日：2021-04-08

申请号：US16893795

申请日：2020-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsu KIM ,  Seonghun PARK ,  Sunjung LEE ,  Hun KIM ,  Namgil YOU

IPC: H01L29/49 ,  H01L23/532 ,  G11C5/02

Abstract: A semiconductor device includes a peripheral circuit region comprising a first substrate, circuit elements on the first substrate, a first insulating layer covering the circuit elements, and a contact plug passing through the first insulating layer and disposed to be connected to the first substrate; and a memory cell region comprising a second substrate, gate electrodes on the second substrate and stacked in a vertical direction, and channel structures passing through the gate electrodes, wherein the contact plug comprises a metal silicide layer disposed to contact the first substrate and having a first thickness, a first metal nitride layer on the metal silicide layer to contact the metal silicide layer and having a second thickness, greater than the first thickness, a second metal nitride layer on the first metal nitride layer, and a conductive layer on the second metal nitride layer.