公开(公告)号：US20230422502A1

公开(公告)日：2023-12-28

申请号：US18202111

申请日：2023-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seulji LEE ,  Jinhyuk Kim ,  Byoungil Lee ,  Sehoon Lee ,  Jinwoo Jeon

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

Abstract: A semiconductor device includes: a memory cell structure on a peripheral circuit structure; a through wiring region on the peripheral circuit structure; and a barrier structure surrounding the through wiring region. The memory cell structure includes: gate electrodes and first interlayer insulating layers that are alternately stacked, the gate electrodes forming a step shape on the second region; a channel structure; and isolation regions penetrating through the gate electrodes. The through wiring region includes: second interlayer insulating layers and sacrificial insulating layers alternately stacked on the second region; and a through contact plug penetrating through the second interlayer insulating layers and the sacrificial insulating layers, and electrically connected to the circuit devices. Each of the sacrificial insulating layers includes a recess portion that is horizontally recessed from the barrier structure toward each of the sacrificial insulating layers.

公开(公告)号：US20240324206A1

公开(公告)日：2024-09-26

申请号：US18581174

申请日：2024-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungik YOO ,  Seungbeom KO ,  Taemok GWON ,  Changjin SON ,  Chadong YEO ,  Seulji LEE ,  Seungmin LEE

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

Abstract: A nonvolatile memory device includes a substrate including a memory cell region and a connection region; a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked; a channel structure passing through the mold structure in the memory cell region; a first cell contact passing through the mold structure in the connection region, connected to a first gate electrode and electrically disconnected from a second gate electrode; a plurality of support structures surrounding the first cell contact planarly in the connection region and extending through the mold structure; and a dam structure located between the first cell contact and the second gate electrode in the connection region and apart from the first cell contact with an insulating ring therebetween.