公开(公告)号：US20250054733A1

公开(公告)日：2025-02-13

申请号：US18424996

申请日：2024-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yirop Kim ,  Seungbin Lim ,  Songyun Kang ,  Kyungsun Kim ,  Kuihyun Yoon ,  Jihwan Kim ,  Heewon Min ,  Insoo Lee ,  Junho Lee ,  Seunghee Cho

IPC: H01J37/32

Abstract: An apparatus for processing a substrate may include a process chamber, a substrate-supporting module, an upper electrode module and a valve module. The process chamber may have a substrate-processing region configured to process the substrate using process gases. The substrate-supporting module may be arranged in a lower region of the process chamber to support the substrate. The upper electrode module may be arranged in an upper region of the process chamber. The valve module may be provided to the upper electrode module to control a supplying of the process gases into the substrate-processing region.

公开(公告)号：US20240162014A1

公开(公告)日：2024-05-16

申请号：US18383211

申请日：2023-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heewon Min ,  Dongyun Yeo ,  Songyun Kang ,  Juho Kim ,  Seungbin Lim

IPC: H01J37/32

CPC classification number: H01J37/32513 ,  H01J2237/166 ,  H01J2237/24507

Abstract: A process chamber includes a housing providing a process space where plasma processing is performed, a first opening/closing device in a side wall of the housing, the first opening/closing device including a first frame and at least one opening/closing blade connected to the first frame, and a second opening/closing device on an outside of the side wall of the housing and on a same line as the first opening/closing device, the second opening/closing device including a second frame and an opening/closing door structure connected to the second frame, wherein the first opening/closing device and the second opening/closing device are configured to maintain a vacuum state of the process space.