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公开(公告)号:US20250054733A1
公开(公告)日:2025-02-13
申请号:US18424996
申请日:2024-01-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yirop Kim , Seungbin Lim , Songyun Kang , Kyungsun Kim , Kuihyun Yoon , Jihwan Kim , Heewon Min , Insoo Lee , Junho Lee , Seunghee Cho
IPC: H01J37/32
Abstract: An apparatus for processing a substrate may include a process chamber, a substrate-supporting module, an upper electrode module and a valve module. The process chamber may have a substrate-processing region configured to process the substrate using process gases. The substrate-supporting module may be arranged in a lower region of the process chamber to support the substrate. The upper electrode module may be arranged in an upper region of the process chamber. The valve module may be provided to the upper electrode module to control a supplying of the process gases into the substrate-processing region.
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公开(公告)号:US20230060400A1
公开(公告)日:2023-03-02
申请号:US17747303
申请日:2022-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yoonbum Nam , Namkyun Kim , Seungbo Shim , Donghyeon Na , Naohiko Okunishi , Dongseok Han , Minyoung Hur , Byeongsang Kim , Kuihyun Yoon
Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.
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公开(公告)号:US20250116332A1
公开(公告)日:2025-04-10
申请号:US18620395
申请日:2024-03-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihwan Kim , Dongseok Han , Kyung-Sun Kim , Heewon Min , Mingil Kim , Yirop Kim , Junghyun Song , Kuihyun Yoon , Woojin Jang , Seunghee Cho
IPC: F16J15/10 , H01L21/673 , H01L21/683
Abstract: A substrate processing apparatus includes an O-ring defined by a central axis, a first guide ring located closer to the central axis than is the O-ring, and a second guide ring located further from the central axis than is the O-ring. A thickness of each of the first guide ring and the second guide ring becomes progressively greater further from the central axis.
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公开(公告)号:US11515193B2
公开(公告)日:2022-11-29
申请号:US16901228
申请日:2020-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kuihyun Yoon , Jaehak Lee , Yunhwan Kim , Jongkeun Lee , Kyohyeok Kim , Jewoo Han
IPC: H01J37/32 , H01L21/683 , H01L21/687 , H01L21/67
Abstract: An etching apparatus includes a reaction chamber having an internal space; an upper electrode in the reaction chamber; a fixing chuck in the internal space of the reaction chamber and below the upper electrode; an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed; a focus ring surrounding the electrostatic chuck; and a plurality of sealing members configured to seal cooling gas provided to the focus ring and being in contact with the focus ring. The plurality of sealing members may be formed of a porous material. Each of the plurality of sealing members may include a body portion and an outer surface surrounding the body portion. Only the body portion may include voids and the outer surface may be smooth and free of voids.
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公开(公告)号:US12222362B2
公开(公告)日:2025-02-11
申请号:US17747303
申请日:2022-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yoonbum Nam , Namkyun Kim , Seungbo Shim , Donghyeon Na , Naohiko Okunishi , Dongseok Han , Minyoung Hur , Byeongsang Kim , Kuihyun Yoon
Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.
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公开(公告)号:US20240379334A1
公开(公告)日:2024-11-14
申请号:US18651124
申请日:2024-04-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Woojin Jang , Wonyoung Jee , Kyungsun Kim , Mingil Kim , Sanghun Bang , Dongseok Han , Changkyu Kwag , Jihwan Kim , Junghyun Song , Kuihyun Yoon
IPC: H01J37/32
Abstract: An example coolant tube block assembly includes a first coolant tube block including at least one of a first coolant flow path tube and a second coolant flow path tube; a hub block configured to expose at least one of the first coolant flow path tube and the second coolant flow path tube on one side, and connected to a lower side of the first coolant tube block; a second coolant tube block including at least one third coolant flow path tube and at least one fourth coolant flow path tube communicating with at least one of the first coolant flow path tube and the second coolant flow path tube, and stacked with the first coolant tube block through the hub block; and a clamp disposed at a lower portion of the second coolant tube block and fastened to a fastening groove formed outside the hub block.
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公开(公告)号:US20240212992A1
公开(公告)日:2024-06-27
申请号:US18453378
申请日:2023-08-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changheon Lee , Sangki Nam , Kuihyun Yoon , Kiho Lee , Sangho Lee , Sangheun Lee , Jaemin Rhee , Junghyun Cho , Seoyeon Choi
IPC: H01J37/32 , H01L21/683
CPC classification number: H01J37/32642 , H01J37/32715 , H01J37/3299 , H01L21/6833 , H01J2237/2007 , H01J2237/334
Abstract: Provided is a plasma processing apparatus including a substrate chuck in a chamber, a restriction ring surrounding an outer perimeter of the substrate chuck, a movable ring on the restriction ring, and an actuator configured to move the movable ring, wherein grooves formed in the restriction ring are opened or closed by movement of the movable ring. In addition, provided is a plasma processing method using the plasma processing apparatus.
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公开(公告)号:US10532896B2
公开(公告)日:2020-01-14
申请号:US15991668
申请日:2018-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kuihyun Yoon , Wonguk Seo , Young Heo
IPC: B65G49/06 , G01N21/88 , H01L21/677
Abstract: A substrate inspection system includes a floating unit that floats a substrate, an inspection unit disposed above the floating unit, a grip unit disposed below the inspection unit and including a first grip member that holds the substrate on the floating unit, a grip transfer unit that moves the grip unit in a first direction, and an illumination unit that generates light. The inspection unit inspects the substrate that floats on the floating unit, the illumination unit is disposed on a moving path of the grip unit, and the light generated by the illumination unit is irradiated onto the inspection unit. The first grip member includes a first adsorption pad that adsorbs the substrate, and a first support member that supports the first adsorption pad and that includes a first opening into which the illumination unit is inserted.
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9.
公开(公告)号:US12183555B2
公开(公告)日:2024-12-31
申请号:US17981874
申请日:2022-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghan Baek , Sangki Nam , Dongseok Han , Namkyun Kim , Kwonsang Seo , Kuihyun Yoon
IPC: H01J37/32
Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.
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10.
公开(公告)号:US20230143049A1
公开(公告)日:2023-05-11
申请号:US17981874
申请日:2022-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghan Baek , Sangki Nam , Dongseok Han , Namkyun Kim , Kwonsang Seo , Kuihyun Yoon
IPC: H01J37/32
CPC classification number: H01J37/32642 , H01J37/32532
Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.
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