公开(公告)号：US20230021152A1

公开(公告)日：2023-01-19

申请号：US17665652

申请日：2022-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Su HWANG ,  Jun Yun KWEON ,  Jum Yong PARK ,  Sol Ji SONG ,  Dong Joon OH ,  Chung Sun LEE

IPC: H01L23/00

Abstract: A semiconductor device includes an insulating layer on a substrate; a via extending from within the substrate and extending through one face of the substrate and a bottom face of a trench defined in the insulating layer such that a portion of a sidewall and a top face of the via are exposed through the substrate; and a pad contacting the exposed portion of the sidewall and the top face of the via. The pad fills the trench. The insulating layer includes a passivation layer on the substrate, and a protective layer is on the passivation layer. An etch stop layer is absent between the passivation layer and the protective layer. A vertical level of a bottom face of the trench is higher than a vertical level of one face of the substrate and is lower than a vertical level of a top face of the passivation layer.