公开(公告)号：US20230021152A1

公开(公告)日：2023-01-19

申请号：US17665652

申请日：2022-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Su HWANG ,  Jun Yun KWEON ,  Jum Yong PARK ,  Sol Ji SONG ,  Dong Joon OH ,  Chung Sun LEE

IPC: H01L23/00

Abstract: A semiconductor device includes an insulating layer on a substrate; a via extending from within the substrate and extending through one face of the substrate and a bottom face of a trench defined in the insulating layer such that a portion of a sidewall and a top face of the via are exposed through the substrate; and a pad contacting the exposed portion of the sidewall and the top face of the via. The pad fills the trench. The insulating layer includes a passivation layer on the substrate, and a protective layer is on the passivation layer. An etch stop layer is absent between the passivation layer and the protective layer. A vertical level of a bottom face of the trench is higher than a vertical level of one face of the substrate and is lower than a vertical level of a top face of the passivation layer.

公开(公告)号：US20200219824A1

公开(公告)日：2020-07-09

申请号：US16819413

申请日：2020-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk Ho LEE ,  Dong Joon OH ,  Ju Suk KANG

IPC: H01L23/552 ,  H01L23/00 ,  H01L23/498 ,  H01L21/56

Abstract: A semiconductor package includes a frame having a first through-hole, a semiconductor chip disposed on the first through-hole an having an active surface on which a connection pad is disposed and an inactive surface, a first encapsulant covering at least a portion of the inactive surface and a side surface of the semiconductor chip, a connection structure disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pad of the semiconductor chip and a ground pattern layer, a side surface cover layer covering at least an outer side surface of the frame, and a metal layer disposed on the upper surface of the first encapsulant and extending downwardly along the side surface cover layer to cover the side surface cover layer and a portion of the side surface of the connection structure.