公开(公告)号：US20230420476A1

公开(公告)日：2023-12-28

申请号：US18342376

申请日：2023-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoemin JEONG ,  Seungjoo NAH ,  Heegeun JEONG ,  Soongeul CHOI ,  Dongmin HAN

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor includes a chip structure including first and second regions. The chip structure further includes a substrate having a first surface, a second surface, and a recess portion, a plurality of photoelectric conversion devices included in the substrate, at least one conductive layer on a sidewall and a bottom surface of the recess portion and on the horizontal insulating layer in the second region, a first passivation layer on a side surface of the conductive layer in the recess portion and the conductive layer on the horizontal insulating layer, and a second passivation layer on side surface of the first passivation layer in the recess portion.