公开(公告)号：US20230420476A1

公开(公告)日：2023-12-28

申请号：US18342376

申请日：2023-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoemin JEONG ,  Seungjoo NAH ,  Heegeun JEONG ,  Soongeul CHOI ,  Dongmin HAN

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor includes a chip structure including first and second regions. The chip structure further includes a substrate having a first surface, a second surface, and a recess portion, a plurality of photoelectric conversion devices included in the substrate, at least one conductive layer on a sidewall and a bottom surface of the recess portion and on the horizontal insulating layer in the second region, a first passivation layer on a side surface of the conductive layer in the recess portion and the conductive layer on the horizontal insulating layer, and a second passivation layer on side surface of the first passivation layer in the recess portion.

公开(公告)号：US20160035773A1

公开(公告)日：2016-02-04

申请号：US14641621

申请日：2015-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjoo NAH ,  Jung-Chak AHN ,  Kyung-Ho LEE

IPC: H01L27/146 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

Abstract translation: 一种半导体器件包括响应于入射光而输出电荷的光接收元件，以及由该光接收元件的输出选通以与入射光成比例地产生源极 - 漏极电流的驱动晶体管，其中 所述驱动晶体管包括第一栅极电极，设置在所述第一栅极电极下方的第一沟道区域，设置在所述第一沟道区域的各个端部并具有第一导电类型的第一源极 - 漏极区域，以及第一沟道区域 停止区域，其设置在所述第一沟道区域的一侧，并且分离所述光接收元件和所述第一沟道区域，所述第一沟道截止区域具有与所述第一导电类型不同的第二导电类型。

公开(公告)号：US20230082070A1

公开(公告)日：2023-03-16

申请号：US17744045

申请日：2022-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeongjae BYEON ,  Jinyoung KIM ,  Seungjoo NAH ,  Heegeun JEONG

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first region and a second region surrounding the first region, a light sensing element in the substrate, a planarization layer on the light sensing element, a color filter array layer including color filters on the planarization layer on the first region of the substrate, a light blocking metal pattern on the planarization layer on the second region of the substrate, a dummy color filter layer on the light blocking metal pattern on a portion of the second region adjacent to the first region of the substrate, and microlens on the color filter array layer. Active pixels are in the first region, and optical black (OB) pixels are in the second region.

公开(公告)号：US20220028915A1

公开(公告)日：2022-01-27

申请号：US17327885

申请日：2021-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mihye JANG ,  Seungjoo NAH ,  Minho JANG ,  Heegeun JEONG

IPC: H01L27/146 ,  H01L27/30 ,  H01L23/00 ,  H01L21/768

Abstract: An image sensor includes a first structure including a first substrate, and a first internal wiring structure on the first substrate. The first substrate includes an active pixel region and a through electrode region around the active pixel region. The first internal wiring structure includes a plurality of first internal wiring patterns. The image sensor further includes a second structure including a second substrate and a second internal wiring structure on the second substrate. The second substrate is arranged on the first substrate. The image sensor additionally includes a through electrode layer arranged in the through electrode region to at least partially fill a through electrode trench, which penetrates the first substrate, and to connect the first internal wiring structure to the second internal wiring structure.