公开(公告)号：US20240312935A1

公开(公告)日：2024-09-19

申请号：US18467199

申请日：2023-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Hee JANG ,  Kwangjin MOON ,  Seokho KIM ,  Soonwook KIM ,  Kunsang PARK

IPC: H01L23/00 ,  H10B80/00

CPC classification number: H01L24/08 ,  H01L24/80 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A bonding semiconductor device according to at least one embodiment is formed by bonding a first chip and a second chip, and includes a chip region and a partition region. A bonding pad formed by bonding a first bonding pad of the first chip and a second bonding pad of the second chip may be provided in the chip region. A separation pattern portion in which a first base layer of a first pattern portion of the first chip and a second base layer of a second pattern portion of the second chip are entirely separated from each other to have an inner space may be provided in the partition region.