SEMICONDUCTOR PACKAGE
    1.
    发明申请

    公开(公告)号:US20230005853A1

    公开(公告)日:2023-01-05

    申请号:US17674974

    申请日:2022-02-18

    Abstract: A semiconductor package includes a first structure having a first insulating layer and a first bonding pad penetrating the first insulating layer, and a second structure on the first structure and having a second insulating layer bonded to the first insulating layer, a bonding pad structure penetrating the second insulating layer and bonded to the first bonding pad, and a test pad structure penetrating the second insulating layer and including a test pad in an opening penetrating the second insulating layer and having a protrusion with a flat surface, and a bonding layer filling the opening and covering the test pad and the flat surface, the protrusion of the test pad extending from a surface in contact with the bonding layer, and the flat surface of the protrusion being within the opening and spaced apart from an interface between the bonding layer and the first insulating layer.

    SEMICONDUCTOR DEVICE INCLUDING THROUGH SUBSTRATE VIAS AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

    公开(公告)号:US20210020544A1

    公开(公告)日:2021-01-21

    申请号:US16795686

    申请日:2020-02-20

    Abstract: A semiconductor device and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes a substrate, a first through substrate via configured to penetrate at least partially through the substrate, the first through substrate via having a first aspect ratio, and a second through substrate via configured to penetrate at least partially through the substrate. The second through substrate via has a second aspect ratio greater than the first aspect ratio, and each of the first through substrate via and the second through substrate via includes a first conductive layer and a second conductive layer. A thickness in a vertical direction of the first conductive layer of the first through substrate via is less than a thickness in the vertical direction of the first conductive layer of the second through substrate via.

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