NAND flash memory device
    2.
    发明授权
    NAND flash memory device 有权
    NAND闪存设备

    公开(公告)号:US08878332B2

    公开(公告)日:2014-11-04

    申请号:US14248517

    申请日:2014-04-09

    Abstract: A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer including a first region filling lower portions of the trenches and a second region filling portions other than the lower portions, removing the second region of the sacrificial layer, forming a second isolation layer on the first isolation layer and the first region of the sacrificial layer, forming air gaps in the trenches by removing the first region of the sacrificial layer, and removing a portion of the first isolation layer and a portion of the second isolation layer while maintaining the air gaps.

    Abstract translation: 一种制造非易失性存储器件的方法包括提供具有由多个沟槽限定的有源区的衬底,在具有多个沟槽的衬底上形成第一隔离层,在第一隔离层上形成牺牲层以填充沟槽, 所述牺牲层包括填充所述沟槽的下部的第一区域和除所述下部以外的第二区域填充部分,去除所述牺牲层的所述第二区域,在所述第一隔离层上形成第二隔离层和在所述第一隔离层的所述第一区域 牺牲层,通过去除牺牲层的第一区域在沟槽中形成气隙,以及在保持气隙的同时去除第一隔离层的一部分和第二隔离层的一部分。

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