公开(公告)号：US09704558B2

公开(公告)日：2017-07-11

申请号：US15224683

申请日：2016-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-yeon Doo ,  Tae-young Oh ,  Cheol Kim ,  Geun-tae Park

IPC: G11C7/00 ,  G11C11/406 ,  G11C11/4091 ,  G11C11/408

CPC classification number: G11C11/40626 ,  G11C11/406 ,  G11C11/40618 ,  G11C11/4082 ,  G11C11/4087 ,  G11C11/4091

Abstract: Provided is a method of refreshing a memory device by controlling a self-refresh cycle according to temperature. In the method, first self-refresh and second self-refresh are performed according to inner temperature of the memory device and a self-refresh cycle is controlled such that an all-bank-refresh (ABR) operation is not performed simultaneously with the start of the second self-refresh. The ABR operation is performed at the start of third self-refresh when the sum of a section of the first self-refresh in which the ABR operation is not performed and a section of the second self-refresh in which the ABR operation is not performed corresponds to a self-refresh cycle.

公开(公告)号：US20170097790A1

公开(公告)日：2017-04-06

申请号：US15194963

申请日：2016-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-yeon Doo ,  Tae-young Oh ,  Kwang-il Park

IPC: G06F3/06 ,  G06F13/16

CPC classification number: G06F13/1668 ,  G06F3/061 ,  G06F3/0635 ,  G06F3/0659 ,  G06F3/0688

Abstract: A memory module includes a first memory group including a plurality of first semiconductor memory devices, and a second memory group including a plurality of second semiconductor memory devices. The first semiconductor memory devices and the second semiconductor memory devices share a command/address bus. The first semiconductor memory devices perform a first operation in response to a command signal received by the first semiconductor memory devices from the command/address bus and the second semiconductor memory devices perform a second operation, different from the first operation, in response to the same command signal received by the second semiconductor memory devices from the command/address bus.

公开(公告)号：US20170117033A1

公开(公告)日：2017-04-27

申请号：US15224683

申请日：2016-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-yeon Doo ,  Tae-young Oh ,  Cheol Kim ,  Geun-tae Park

IPC: G11C11/406 ,  G11C11/408 ,  G11C11/4091

CPC classification number: G11C11/40626 ,  G11C11/406 ,  G11C11/40618 ,  G11C11/4082 ,  G11C11/4087 ,  G11C11/4091

Abstract: Provided is a method of refreshing a memory device by controlling a self-refresh cycle according to temperature. In the method, first self-refresh and second self-refresh are performed according to inner temperature of the memory device and a self-refresh cycle is controlled such that an all-bank-refresh (ABR) operation is not performed simultaneously with the start of the second self-refresh. The ABR operation is performed at the start of third self-refresh when the sum of a section of the first self-refresh in which the ABR operation is not performed and a section of the second self-refresh in which the ABR operation is not performed corresponds to a self-refresh cycle.