公开(公告)号：US12200370B2

公开(公告)日：2025-01-14

申请号：US18169489

申请日：2023-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhoon Kang ,  Byounggeun Choi ,  Subin Kim ,  Beomjoon Kwon ,  Bohyun Chun

IPC: H04N23/743 ,  H04N5/265 ,  H04N23/82

Abstract: An electronic device is provided. The electronic device includes a camera, a memory, and at least one processor electrically coupled to the camera and the memory. The at least one processor may obtain a plurality of image frames through the camera, in response to a shooting start command, obtain a shooting command subsequent to the shooting start command, select a first number of image frames from among the plurality of image frames obtained before the shooting command, in response to the shooting command, and generate a first image synthesized based on the selected first number of image frames.

公开(公告)号：US20240055427A1

公开(公告)日：2024-02-15

申请号：US18143187

申请日：2023-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin KIM ,  Namjae Kim ,  Subin Kim ,  Byungmoo Kim ,  Joongwon Jeon

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/528

CPC classification number: H01L27/0886 ,  H01L21/823475 ,  H01L23/528 ,  H01L21/823493 ,  H01L2029/7858

Abstract: A semiconductor device including: a substrate including a PMOS region, an N-well tap forming region, and a boundary region; PMOS field effect transistors on the PMOS region; an N-well tap region doped with N-type impurities in the N-well tap forming region; a first metal pattern connected to at least one impurity region of the PMOS field effect transistors, wherein the first metal pattern extends so that an end of the first metal pattern is positioned on the boundary region; a second metal pattern electrically connected to the N-well tap region, wherein the second metal pattern extends so that an end of the second metal pattern is positioned on the boundary region; a first contact plug on the first metal pattern; a second contact plug on the second metal pattern; and an upper wiring on the first and second contact plugs.

公开(公告)号：US20250031027A1

公开(公告)日：2025-01-23

申请号：US18778504

申请日：2024-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehong KIM ,  Subin Kim ,  Youngseon Jeon

IPC: H04W8/18 ,  H04W4/80 ,  H04W88/06

Abstract: An electronic device includes: a near field communication (NFC) circuit; at least one processor operatively connected to the NFC circuit; and memory storing instructions that, when executed by the at least one processor, cause the electronic device to: receive, via the NFC circuit from an external electronic device, an NFC application identifier (ID), identify a subscriber identity module (SIM) profile, from among a plurality of SIM profiles, that corresponds to the NFC application ID, and perform, via the NFC circuit, an NFC communication with the external electronic device based on the identified SIM profile.

公开(公告)号：US20220344285A1

公开(公告)日：2022-10-27

申请号：US17720435

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsu JEON ,  Subin Kim ,  Byungmoo Kim

IPC: H01L23/60 ,  H01L23/00 ,  H01L23/58

Abstract: A semiconductor device includes a semiconductor substrate including a main chip region, a guard ring surrounding the main chip region, a moisture-proof ring surrounding the guard ring, an electrode structure in contact with the semiconductor substrate in the main chip region, and at least one metal pattern structure extending from the electrode structure to the moisture-proof ring. The at least one metal pattern structure is a connection line that grounds the moisture-proof ring.