公开(公告)号：US20240220376A1

公开(公告)日：2024-07-04

申请号：US18338001

申请日：2023-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewook HEO ,  Suckhyun NAM ,  Ho-Jin CHUN ,  Minha KIM

IPC: G06F11/14

CPC classification number: G06F11/1479

Abstract: Some example embodiments provide a storage device including a non-volatile memory; a microcontroller unit configured to monitor statuses of constituent elements of the storage device and output an abnormality signal based on the constituent elements not being in a normal status; and a storage controller configured to perform a first check and a second check different from the first check on a first firmware code stored in the microcontroller unit in response to the abnormality signal and perform recovery by using a second firmware code stored in the non-volatile memory based on at least one of the first check and the second check having failed.

公开(公告)号：US20250165332A1

公开(公告)日：2025-05-22

申请号：US18807266

申请日：2024-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myeonghun KIM ,  Taesun PARK ,  Suckhyun NAM ,  Iksung PARK ,  Hunglae EUN

IPC: G06F11/07 ,  G06F1/30

Abstract: Disclosed is a storage device which includes a memory device, a power supply port that receives a first external power voltage from a host device, a power supply circuit that receives the first external power voltage from the power supply port and generates a first internal power voltage based on the first external power voltage, a monitoring circuit that receives the first external power voltage from the power supply port and generates a first power-on-reset signal based on monitoring the first external power voltage, and a storage controller configured to control the memory device. The storage controller is driven based on the first internal power voltage and the first power-on-reset signal, and the monitoring circuit detects a voltage drop in the first power-on-reset signal transmitted from the monitoring circuit to the storage controller and provides an error detection signal to the storage controller in response to detecting the voltage drop.

公开(公告)号：US20240256386A1

公开(公告)日：2024-08-01

申请号：US18359406

申请日：2023-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suckhyun NAM ,  Taesun PARK ,  Minsung KIL ,  Ho-Jin CHUN

IPC: G06F11/14 ,  G06F1/30 ,  G06F11/30

CPC classification number: G06F11/1417 ,  G06F1/30 ,  G06F11/3034

Abstract: A storage device includes a plurality of power circuits configured to operate sequentially to drive the storage device, a control circuit configured to, monitor a plurality of first monitoring signals received from the plurality of power circuits, and generate a retry request in response to detection of hardware initialization failure in at least one of the plurality of power circuits based on the plurality of first monitoring signals, and a power sequence circuit configured to, monitor a plurality of second monitoring signals received from the plurality of power circuits and the control circuit, and retry a hardware initialization operation for at least one power circuit of the plurality of power circuits based on the retry request and the plurality of second monitoring signals.