公开(公告)号：US20220310594A1

公开(公告)日：2022-09-29

申请号：US17569363

申请日：2022-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youncheol Jeong ,  Jaeung Koo ,  Kwansung Kim ,  Seungyoon Kim ,  Boun Yoon ,  Jooho Jung ,  Sukbae Joo

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, a plurality of channel layers vertically spaced apart from each other on the active region, a gate structure vertically overlapping the active region and the plurality of channel layers on the substrate, extending in a second direction, and including a gate electrode surrounding the plurality of channel layers and a gate capping layer disposed on an upper surface of the gate electrode, a first source/drain region disposed on a side of the gate structure on the active region and in contact with the plurality of channel layers, an isolation structure intersecting the active region on the substrate, extending in the second direction, and disposed between the first source/drain region and a second source/drain region adjacent to each other, and contact structures in contact with the source/drain regions.