公开(公告)号：US20180053797A1

公开(公告)日：2018-02-22

申请号：US15630063

申请日：2017-06-22

申请人： Samsung Electronics Co., Ltd.

发明人： Ho-Jin LEE ,  Kwangjin MOON ,  Seokho KIM ,  Sukchul BANG ,  Jin Ho AN ,  Naein LEE

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683 ,  H01L2224/11

摘要： A semiconductor device includes a semiconductor substrate with first and second surfaces facing each other, an etch stop pattern in a trench formed in the first surface of the semiconductor substrate, a first insulating layer on the first surface of the semiconductor substrate, and a through via penetrating the semiconductor substrate and the first insulating layer. The etch stop pattern surrounds a portion of a lateral surface of the through via.