公开(公告)号：US11895420B2

公开(公告)日：2024-02-06

申请号：US17718450

申请日：2022-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myeongjin Oh ,  Jaejung Park ,  Hyosang Kim ,  Sukho Shin ,  Haneul Jung

IPC: H04N25/75 ,  H04N25/77 ,  H04N25/673

CPC classification number: H04N25/75 ,  H04N25/673 ,  H04N25/77

Abstract: In an example embodiment, a ramp generator includes a ramp circuit that receives a first ramp enable signal from a control circuit during a first ramp period, the first ramp period including a first reset period and a first sensing period, and the ramp circuit being configured to output a first ramp signal to a correlated double sampling circuit; an emphasis circuit that increases a voltage level of the first ramp signal during the first reset period, based on a first enable signal received from the control circuit; and a pre-emphasis circuit that further increases the voltage level of the first ramp signal during a first pre-emphasis period in the first reset period, based on a second enable signal received from the control circuit.