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公开(公告)号:US12262133B2
公开(公告)日:2025-03-25
申请号:US18213032
申请日:2023-06-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Younghyun Yoon , Haneul Jung , Dongjae Han
IPC: H04N25/767 , H04N25/616 , H04N25/772
Abstract: A ramp signal generating device and an image sensor for decreasing the latency of a ramp signal are provided. The ramp signal generating device may include a first circuit configured to detect a capacitance of a parasitic capacitor, a second circuit configured to charge the parasitic capacitor with a first voltage, and a third circuit configured to receive the capacitance as an input to generate a load current causing the ramp signal with a predetermined slope.
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公开(公告)号:US11895420B2
公开(公告)日:2024-02-06
申请号:US17718450
申请日:2022-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Myeongjin Oh , Jaejung Park , Hyosang Kim , Sukho Shin , Haneul Jung
IPC: H04N25/75 , H04N25/77 , H04N25/673
CPC classification number: H04N25/75 , H04N25/673 , H04N25/77
Abstract: In an example embodiment, a ramp generator includes a ramp circuit that receives a first ramp enable signal from a control circuit during a first ramp period, the first ramp period including a first reset period and a first sensing period, and the ramp circuit being configured to output a first ramp signal to a correlated double sampling circuit; an emphasis circuit that increases a voltage level of the first ramp signal during the first reset period, based on a first enable signal received from the control circuit; and a pre-emphasis circuit that further increases the voltage level of the first ramp signal during a first pre-emphasis period in the first reset period, based on a second enable signal received from the control circuit.
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