公开(公告)号：US20240411227A1

公开(公告)日：2024-12-12

申请号：US18427044

申请日：2024-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Gap Im ,  Seonkyu Shin ,  Sanghoon Ahn ,  Hanhum Park ,  Minkyung Cho ,  Chungryeol Lee ,  Seungmin Lee ,  Changhyeon Lee ,  Sukwon Jang

IPC: G03F7/11 ,  G03F7/031 ,  G03F7/16 ,  H01L21/027 ,  H01L21/308

Abstract: A photolithograph method is provided. The photolithograph method may include forming a photoresist pattern on a substrate and conformally forming a liner layer on the photoresist pattern, wherein the forming of the liner layer includes a deposition process of reacting an initiator and a monomer with each other, the monomer includes multiple bonds between carbon atoms, the initiator includes a material that forms a radical by thermal decomposition, a copolymer is formed by an initiating reaction between the radical and the monomer, and the liner layer includes the copolymer.