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28 条记录 (耗时 0.02 秒)

    STANDARD CELL AND INTEGRATED CIRCUIT INCLUDING THE SAME
    1.
    发明申请
    STANDARD CELL AND INTEGRATED CIRCUIT INCLUDING THE SAME 有权

    公开(公告)号：US20230077532A1

    公开(公告)日：2023-03-16

    申请号：US17946761

    申请日：2022-09-16

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Wookyu KIM ,  Changbeom Kim ,  Taejun Yoo ,  Seungmin Lee

    IPC分类号： G06F30/392 ,  G06F30/394 ,  G06F30/327

    摘要： A standard cell and an integrated circuit including the same are is provided. The standard cell is provided in first and second rows. The standard cell includes: a first circuit region provided in the first row and including a plurality of first transistors; a second circuit region provided in the second row and including a plurality of second transistors; a first input pin provided in the first circuit region and configured to receive a first input signal; and a second input pin provided in the second circuit region and configured to receive a second input signal. The first input signal is input to gate terminals of each of the plurality of first transistors, and the second input signal is input to gate terminals of each of the plurality of second transistors. The first circuit region is symmetric with respect to a second horizontal direction and the second circuit region is symmetric with respect to the second horizontal direction.

    SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME 有权

    公开(公告)号：US20230005949A1

    公开(公告)日：2023-01-05

    申请号：US17720453

    申请日：2022-04-14

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Seungmin Lee ,  Kangmin Kim ,  Junhyoung Kim ,  Yonghoon Son ,  Joonsung Lim

    IPC分类号： H01L27/11575 ,  H01L23/535 ,  H01L49/02 ,  H01L27/11582 ,  H01L27/11573

    摘要： A semiconductor device includes a first structure including a peripheral circuit and a second structure on the first structure. The second structure includes: a stack structure including first and second stack structures; separation structures passing through the first stack structure; a memory vertical structure between the separation structures and passing through the first stack structure; and a capacitor including first and second capacitor electrodes passing through the second stack structure and extending parallel to each other. The first stack structure includes spaced apart gate electrodes and interlayer insulating layers alternately stacked therewith. The second stack structure includes spaced apart first insulating layers, and second insulating layers alternately stacked therewith. Each of the first and second capacitor electrodes has a linear shape. The first and second insulating layers include a different material from each other. The second insulating layers include the same material as the interlayer insulating layers.

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11437396B2

    公开(公告)日：2022-09-06

    申请号：US17032128

    申请日：2020-09-25

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Junhyoung Kim ,  Jisung Cheon ,  Yoonhwan Son ,  Seungmin Lee

    IPC分类号： H01L27/11578 ,  H01L27/11568 ,  H01L27/11573

    摘要： A semiconductor device includes a lower structure; a first upper structure including lower gate layers on the lower structure; a second upper structure including upper gate layers on the first upper structure; separation structures penetrating the first and second upper structures on the lower structure; a memory vertical structure penetrating the lower and upper gate layers between the separation structures; and a first contact plug penetrating the first and second upper structures and spaced apart from the lower and upper gate layers. Each of the first contact plug and the memory vertical structure includes a lateral surface having a bent portion. The bent portion of the lateral surface is disposed between a first height level on which an uppermost gate layer of the lower gate layers is disposed and a second height level on which a lowermost gate layer of the upper gate layers is disposed.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12133384B2

    公开(公告)日：2024-10-29

    申请号：US18352182

    申请日：2023-07-13

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Junhyoung Kim ,  Jisung Cheon ,  Yoonhwan Son ,  Seungmin Lee

    IPC分类号： H10B43/20 ,  H10B43/30 ,  H10B43/40

    CPC分类号： H10B43/20 ,  H10B43/30 ,  H10B43/40

    摘要： A semiconductor device includes a lower structure; a first upper structure including lower gate layers on the lower structure; a second upper structure including upper gate layers on the first upper structure; separation structures penetrating the first and second upper structures on the lower structure; a memory vertical structure penetrating the lower and upper gate layers between the separation structures; and a first contact plug penetrating the first and second upper structures and spaced apart from the lower and upper gate layers. Each of the first contact plug and the memory vertical structure includes a lateral surface having a bent portion. The bent portion of the lateral surface is disposed between a first height level on which an uppermost gate layer of the lower gate layers is disposed and a second height level on which a lowermost gate layer of the upper gate layers is disposed.