公开(公告)号：US20230378356A1

公开(公告)日：2023-11-23

申请号：US18362255

申请日：2023-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Hom PAAK ,  Sung Min KIM

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L23/485

CPC classification number: H01L29/7845 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41791 ,  H01L23/485

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.

公开(公告)号：US20200185524A1

公开(公告)日：2020-06-11

申请号：US16794326

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Hom PAAK ,  Sung Min KIM

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L23/485

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.