公开(公告)号：US12206022B2

公开(公告)日：2025-01-21

申请号：US18362255

申请日：2023-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Hom Paak ,  Sung Min Kim

IPC: H01L29/78 ,  H01L23/485 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.

公开(公告)号：US20220115537A1

公开(公告)日：2022-04-14

申请号：US17560353

申请日：2021-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Hom Paak ,  Sung Min Kim

IPC: H01L29/78 ,  H01L23/485 ,  H01L29/417 ,  H01L29/08 ,  H01L29/165 ,  H01L29/06

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.

公开(公告)号：US11764299B2

公开(公告)日：2023-09-19

申请号：US17560353

申请日：2021-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Hom Paak ,  Sung Min Kim

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L23/485

CPC classification number: H01L29/7845 ,  H01L23/485 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41791

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.

公开(公告)号：US11211490B2

公开(公告)日：2021-12-28

申请号：US16794326

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Hom Paak ,  Sung Min Kim

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L23/485

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.