公开(公告)号：US20180261677A1

公开(公告)日：2018-09-13

申请号：US15653588

申请日：2017-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung Hoon LEE ,  Hyeon Jin KIM ,  Hoon Joo NA ,  Sung In SUH ,  Chan Hyeong LEE ,  Hu Yong LEE ,  Seong Hoon JEONG ,  Sang Jin HYUN

IPC: H01L29/49 ,  H01L29/78 ,  H01L27/092 ,  H01L21/28

Abstract: A semiconductor device includes a gate insulating layer disposed on a substrate, a first work function tuning layer disposed on the gate insulating layer, a lower barrier conductive layer on and in contact with the first work function tuning layer, and an upper barrier conductive layer on and in contact with the lower barrier conductive layer. The upper barrier conductive layer and the lower barrier conductive layer include a material in common, e.g., they may each include a titanium nitride (TiN) layer.