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    SEMICONDUCTOR DEVICES
    2.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20190273020A1

    公开(公告)日：2019-09-05

    申请号：US16410268

    申请日：2019-05-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chung-Il Hyun ,  Semee JANG ,  Sung Yun LEE

    IPC: H01L21/768 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11575

    Abstract: A semiconductor device includes a comprise a substrate including a main zone and an extension zone, vertical channels on the main zone, and an electrode structure including gate electrodes stacked on the substrate. The vertical channel structures extend in a first direction perpendicular to a top surface of the substrate. The gate electrodes include line regions and contact regions. The line regions extend from the main zone toward the extension zone along a second direction the second direction that is perpendicular to the first direction. The contact regions are on ends of the line regions and are thicker than the line regions. A spacing distance in the second direction between the contact regions is greater than a spacing distance in the first direction between the line regions.

    SEMICONDUCTOR DEVICES
    3.
    发明申请
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20200235003A1

    公开(公告)日：2020-07-23

    申请号：US16838648

    申请日：2020-04-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chung-II HYUN ,  Semee JANG ,  Sung Yun LEE

    IPC: H01L21/768 ,  H01L27/11575 ,  H01L27/11582 ,  H01L27/1157

    Abstract: A semiconductor device includes a comprise a substrate including a main zone and an extension zone, vertical channels on the main zone, and an electrode structure including gate electrodes stacked on the substrate. The vertical channel structures extend in a first direction perpendicular to a top surface of the substrate. The gate electrodes include line regions and contact regions. The line regions extend from the main zone toward the extension zone along a second direction the second direction that is perpendicular to the first direction. The contact regions are on ends of the line regions and are thicker than the line regions. A spacing distance in the second direction between the contact regions is greater than a spacing distance in the first direction between the line regions.

    MEMORY DEVICE
    4.
    发明申请
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20190341396A1

    公开(公告)日：2019-11-07

    申请号：US16509708

    申请日：2019-07-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jang Hyun YOU ,  Jin Taek PARK ,  Taek Soo SHIN ,  Sung Yun LEE

    IPC: H01L27/11568 ,  H01L27/11575 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11521 ,  H01L29/792 ,  H01L29/788 ,  H01L27/11556 ,  H01L27/11582

    Abstract: A memory device including a substrate, a plurality of channel columns, a gate stack, an interlayer insulating layer, a plurality of first trenches, and at least one second trench. The substrate includes a cell array region and a connection region. The channel columns cross an upper surface of the substrate in the cell array region. The gate stack includes a plurality of gate electrode layers surrounding the channel columns in the cell array region. The gate electrode layers extend to different lengths in the connection region to form a stepped structure. The interlayer insulating layer is on the gate stack. The first trenches divide the gate stack and the interlayer insulating layer into a plurality of regions. The at least one second trench is inside of the interlayer insulating layer in the connection region and between the first trenches.

    THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    6.
    发明申请
    THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开

    公开(公告)号：US20200243554A1

    公开(公告)日：2020-07-30

    申请号：US16845236

    申请日：2020-04-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chang Sup LEE ,  Phil Ouk NAM ,  Sung Yun LEE ,  Chang Seok KANG

    IPC: H01L27/11575 ,  H01L23/528 ,  H01L23/522 ,  H01L27/11582 ,  H01L27/11548 ,  H01L27/11556 ,  H01L23/532 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11578

    Abstract: A three-dimensional semiconductor device and a method of forming the same are provided. The three-dimensional semiconductor device comprises a substrate including first and second areas; first and second main separation patterns, disposed on the substrate and intersecting the first and second areas; gate electrodes disposed between the first and second main separation patterns and forming a stacked gate group, the gate electrodes sequentially stacked on the first area and extending in a direction from the first area to the second area; and at least one secondary separation pattern disposed on the second area, disposed between the first and second main separation patterns, and penetrating through the gate electrodes disposed on the second area. The gate electrodes include pad portions on the second area, and the pad portions are thicker than the gate electrodes disposed on the first area and in contact with the at least one secondary separation pattern.

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