公开(公告)号：US20230288795A1

公开(公告)日：2023-09-14

申请号：US18052026

申请日：2022-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hwan BAE ,  Se Jin PARK

IPC: G03F1/36 ,  G03F1/44 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F1/36 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70525

Abstract: A method of fabricating a mask by performing optical proximity correction (OPC) is provided, The method of fabricating a mask includes generating a target curve by using bias control points, extracting a first contour of an initial design mask by performing an OPC process, generating a first updated design mask, which is obtained by updating the initial design mask, by using the first contour and the target curve, extracting a second contour of the first updated design mask by performing the OPC process, and generating a second updated design mask by using the second contour and the target curve

公开(公告)号：US20250156113A1

公开(公告)日：2025-05-15

申请号：US18635752

申请日：2024-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangkwon LEE ,  Sun-Dong KIM ,  Hyunjoo JUNG ,  Sung-Hwan BAE

IPC: G06F3/06

Abstract: Disclosed is an operating method of a storage device which includes a non-volatile memory device and a storage controller. The method includes providing, by the storage controller, the non-volatile memory device with a first command indicating a target memory operation of user data, performing, by the non-volatile memory device, the target memory operation in a memory region based on the first command and first setting information stored in an E-fuse region, providing, by the non-volatile memory device, the storage controller with a first response indicating that the target memory operation fails, providing, by the storage controller, the non-volatile memory device with a second command indicating an initialization operation of the E-fuse region based on the first response, updating, by the non-volatile memory device, the first setting information of the E-fuse region based on the second command, so as to be changed to second setting information.