公开(公告)号：US20160196863A1

公开(公告)日：2016-07-07

申请号：US14970739

申请日：2015-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Jun SHIN ,  Sung-Min YIM

IPC: G11C11/406

CPC classification number: G11C11/406 ,  G11C7/02 ,  G11C11/40611 ,  G11C11/40618 ,  G11C11/40622 ,  G11C11/4087 ,  G11C29/783

Abstract: A method of operating a memory device comprises receiving a first row address corresponding to a first word line in the first sub bank array and corresponding to a first word line in the second sub bank array, determining whether at least one of the first word lines has been replaced with a spare word line, (a) when neither of the first word lines has been replaced, receiving a first number of row addresses for refresh operations in order to refresh adjacent word lines to the first word lines, and (b) when at least one of the first word lines has been replaced with a spare word line, receiving a second number of row addresses for refresh operations in order to refresh adjacent word lines to any non-replaced first word and any spare word lines, wherein the second number is greater than the first number.

Abstract translation: 一种操作存储器件的方法包括：接收对应于第一子存储体阵列中的第一字线的第一行地址并对应于第二子存储体阵列中的第一字线，确定第一字线中的至少一个是否具有 被替换为备用字线，（a）当两个第一字线都没有被替换时，接收刷新操作的第一数量的行地址以便刷新与第一字线相邻的字线，以及（b）当 第一字线中的至少一个已被替换为备用字线，接收用于刷新操作的第二数量的行地址，以便将相邻字线刷新到任何未替换的第一字和任何备用字线，其中第二字线 数字大于第一个数字。