公开(公告)号：US20180190341A1

公开(公告)日：2018-07-05

申请号：US15830314

申请日：2017-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-geun DO ,  Jong-ho LEE ,  Chan-yong LEE ,  Min-soo JANG

IPC: G11C11/406 ,  G11C11/4063

CPC classification number: G11C11/40615 ,  G11C11/40618 ,  G11C11/4063 ,  G11C11/4074 ,  G11C2211/4067 ,  G11C2211/4068

Abstract: Provided is a memory device capable of reducing power consumption. The memory device includes a plurality of memory cells; and a self refresh controller configured to perform a refreshing cycle, which includes a first time interval and a second time interval, for a plurality of number of times, the second time interval being longer than the first section, wherein the self refresh controller is configured to perform a burst refreshing operation during the first time interval and to perform a power supply controlling operation during the second time interval.