公开(公告)号：US11381366B2

公开(公告)日：2022-07-05

申请号：US16460386

申请日：2019-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-hun Han ,  Young-wook Son ,  Sung-hyun Choi ,  Seong-won Kim ,  Kang-hyun Lee

IPC: H04L5/00 ,  H04W24/08 ,  H04W72/04 ,  H04W56/00

Abstract: Provided is a wireless communication device including at least one processor configured to transmit a plurality of test signals generated based on different transmission factors to a reception device, and transmit first data to the reception device based on a transmission factor of a first test signal among the plurality of test signals in response to determining a first acknowledgement signal has been received, the first acknowledgement signal corresponding to the first test signal, the transmission of the first data being via a wireless data channel while second data is contemporaneously transmitted via the wireless data channel by another device.

公开(公告)号：US10529555B2

公开(公告)日：2020-01-07

申请号：US16422375

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk Tak ,  Tae-jong Lee ,  Bon-young Koo ,  Ki-yeon Park ,  Sung-hyun Choi

IPC: H01L21/02 ,  C23C16/30 ,  H01L29/66 ,  H01L29/49 ,  H01L27/11 ,  H01L27/092 ,  C23C16/455 ,  H01L29/78

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

公开(公告)号：US10460927B2

公开(公告)日：2019-10-29

申请号：US15296220

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-suk Tak ,  Tae-jong Lee ,  Bon-young Koo ,  Ki-yeon Park ,  Sung-hyun Choi

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/49 ,  H01L27/092 ,  H01L27/11 ,  C23C16/455 ,  C23C16/30 ,  H01L29/78

Abstract: A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

公开(公告)号：US10096688B2

公开(公告)日：2018-10-09

申请号：US15206868

申请日：2016-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-suk Tak ,  Gi-gwan Park ,  Tae-jong Lee ,  Bon-young Koo ,  Ki-yeon Park ,  Sung-hyun Choi

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06

Abstract: An integrated circuit device includes a fin type active area protruding from a substrate and having an upper surface at a first level; a nanosheet extending in parallel to the upper surface of the fin type active area and comprising a channel area, the nanosheet being located at a second level spaced apart from the upper surface of the fin type active area; a gate disposed on the fin type active area and surrounding at least a part of the nanosheet, the gate extending in a direction crossing the fin type active area; a gate dielectric layer disposed between the nanosheet and the gate; a source and drain region formed on the fin type active area and connected to one end of the nanosheet; a first insulating spacer on the nanosheet, the first insulating spacer covering sidewalls of the gate; and a second insulating spacer disposed between the gate and the source and drain region in a space between the upper surface of the fin type active area and the nanosheet, the second insulating spacer having a multilayer structure.

公开(公告)号：US20170110554A1

公开(公告)日：2017-04-20

申请号：US15206868

申请日：2016-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-suk Tak ,  Gi-gwan Park ,  Tae-jong Lee ,  Bon-young Koo ,  Ki-yeon Park ,  Sung-hyun Choi

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L29/4991 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78696

Abstract: An integrated circuit device includes a fin type active area protruding from a substrate and having an upper surface at a first level; a nanosheet extending in parallel to the upper surface of the fin type active area and comprising a channel area, the nanosheet being located at a second level spaced apart from the upper surface of the fin type active area; a gate disposed on the fin type active area and surrounding at least a part of the nanosheet, the gate extending in a direction crossing the fin type active area; a gate dielectric layer disposed between the nanosheet and the gate; a source and drain region formed on the fin type active area and connected to one end of the nanosheet; a first insulating spacer on the nanosheet, the first insulating spacer covering sidewalls of the gate; and a second insulating spacer disposed between the gate and the source and drain region in a space between the upper surface of the fin type active area and the nanosheet, the second insulating spacer having a multilayer structure.