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公开(公告)号：US10425520B2
公开(公告)日：2019-09-24
申请号：US14955886
申请日：2015-12-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sun-hwa Kim , Sung-won Kim , Hee-bum Ahn , Joonoo Kim , Jin Ra , Jong-hyun Ryu , Kyung-ho Jeong , Yong-ho Kim , Yong-gook Park , Myung-sik Kim , Chan-hong Min , Jin-hyuk Jung , Woo-hyek Choi
Abstract: A technique for controlling an electronic device thereof is provided. The technique includes, in response to an attachment device being selected by an external device from a list of attachment devices, receiving and storing mapping information in which data configured in a first communication format and data configured in a second communication format in relation to one function of the electronic device to which the attachment device is attached are mapped. In addition, in response to the data configured in the first communication format being received from an external device which is communicably connected with the attachment device, the data configured in the second communication format corresponding to the data configured in the first communication format based on the mapping information is acquired, and the data configured in the second communication format to the electronic device to control the one function of the electronic device to be performed is transmitted.
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公开(公告)号：US10916700B2
公开(公告)日：2021-02-09
申请号：US16513014
申请日：2019-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seul-ji Song , Sung-won Kim , Il-mok Park , Jong-chul Park , Ji-hyun Jeong
Abstract: A method of fabricating a memory device may include forming a first conductive line extending over a substrate in a first direction, forming a memory cell pillar on the first conductive line, and forming a second conductive line extending over the memory cell pillar in a second direction that intersects the first direction, such that the first and second conductive lines vertically overlap with the memory cell pillar interposed between the first and second conductive lines. The memory cell pillar may include a heating electrode layer and a resistive memory layer. The resistive memory layer may include a wedge memory portion and a body memory portion. The wedge memory portion may contact the heating electrode layer and may have a width that that changes with increasing distance from the heating electrode layer. The body memory portion may be connected to the wedge memory portion.
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公开(公告)号：US10341482B2
公开(公告)日：2019-07-02
申请号：US14955886
申请日：2015-12-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sun-hwa Kim , Sung-won Kim , Hee-bum Ahn , Joonoo Kim , Jin Ra , Jong-hyun Ryu , Kyung-ho Jeong , Yong-ho Kim , Yong-gook Park , Myung-sik Kim , Chan-hong Min , Jin-hyuk Jung , Woo-hyek Choi
Abstract: A technique for controlling an electronic device thereof is provided. The technique includes, in response to an attachment device being selected by an external device from a list of attachment devices, receiving and storing mapping information in which data configured in a first communication format and data configured in a second communication format in relation to one function of the electronic device to which the attachment device is attached are mapped. In addition, in response to the data configured in the first communication format being received from an external device which is communicably connected with the attachment device, the data configured in the second communication format corresponding to the data configured in the first communication format based on the mapping information is acquired, and the data configured in the second communication format to the electronic device to control the one function of the electronic device to be performed is transmitted.
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公开(公告)号：US11064233B2
公开(公告)日：2021-07-13
申请号：US16633045
申请日：2018-07-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-won Kim , Do-sung Kim , Mu-gong Bae , Hyun-don Yoon , Bong-seok Lee , Hee-ran Lee
IPC: H04N21/258 , H04L29/08
Abstract: The present disclosure relates to an artificial intelligence (AI) system utilizing machine learning algorithms and to an application thereof, and discloses an electronic device. The electronic device comprises: a memory for saving history information corresponding to the day and/or time for each of a plurality of services provided by the electronic device; and a processor for giving a weight to a piece of history corresponding to the day and/or time of an occurred event and selecting a recommended service from among the plurality of services on the basis of the piece of history given the weight, when a predetermined event occurs.
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Patent Agency Ranking
公开(公告)号：US11064261B2
公开(公告)日：2021-07-13
申请号：US16638354
申请日：2018-09-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Do-sung Kim , Sung-won Kim , Mu-gong Bae , Hyun-don Yoon , Bong-seok Lee , Hee-ran Lee
IPC: H04N21/482 , H04N21/442 , H04N21/45 , H04N21/466 , H04N21/845
Abstract: A method for recommending a content by an electronic device is disclosed. The method for recommending a content by an electronic device includes the steps of recommending a content on the basis of a viewing history, calculating recommendation hit ratios of the recommended content according to days of the week and times of the day on the basis of the selection frequency of the recommended content, and storing the same, and based on a specific event occurring, calculating a recommendation hit ratio of a content corresponding to the day and time when the specific event occurred, and based on the calculated recommendation hit ratio satisfying a predetermined condition, directly providing the content.
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公开(公告)号：US20190341547A1
公开(公告)日：2019-11-07
申请号：US16513014
申请日：2019-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seul-ji Song , Sung-won Kim , Il-mok Park , Jong-chul Park , Ji-hyun Jeong
Abstract: A memory device may include a first conductive line, a second conductive line extending in a direction intersecting the first conductive line, such that the first conductive line and the second conductive line vertically overlap at a cross-point between the first conductive line and the second conductive line, and a memory cell pillar at the cross-point. The memory cell pillar may include a heating electrode layer and a resistive memory layer contacting the heating electrode layer. The resistive memory layer may include a wedge memory portion having a width that increases continuously in proportion with increasing distance from the heating electrode layer, and a body memory portion connected to the wedge memory portion such that the body memory portion and the wedge memory portion comprise an individual and continuous layer, the body memory portion having a greater width than the wedge memory portion.
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公开(公告)号：US11159669B2
公开(公告)日：2021-10-26
申请号：US16457228
申请日：2019-06-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sun-hwa Kim , Sung-won Kim , Hee-bum Ahn , Joonoo Kim , Jin Ra , Jong-hyun Ryu , Kyung-ho Jeong , Yong-ho Kim , Yong-gook Park , Myung-sik Kim , Chan-hong Min , Jin-hyuk Jung , Woo-hyek Choi
IPC: H04M1/72 , H04M1/72415 , H04L12/12 , H04L29/08 , H04L12/28 , H04L12/46 , H04M1/72412
Abstract: A technique for controlling an electronic device thereof is provided. The technique includes, in response to an attachment device being selected by an external device from a list of attachment devices, receiving and storing mapping information in which data configured in a first communication format and data configured in a second communication format in relation to one function of the electronic device to which the attachment device is attached are mapped. In addition, in response to the data configured in the first communication format being received from an external device which is communicably connected with the attachment device, the data configured in the second communication format corresponding to the data configured in the first communication format based on the mapping information is acquired, and the data configured in the second communication format to the electronic device to control the one function of the electronic device to be performed is transmitted.
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公开(公告)号：US10403817B2
公开(公告)日：2019-09-03
申请号：US15867951
申请日：2018-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seul-ji Song , Sung-won Kim , Il-mok Park , Jong-chul Park , Ji-Hyun Jeong
Abstract: A memory device may include a first conductive line, a second conductive line extending in a direction intersecting the first conductive line, such that the first conductive line and the second conductive line vertically overlap at a cross-point between the first conductive line and the second conductive line, and a memory cell pillar at the cross-point. The memory cell pillar may include a heating electrode layer and a resistive memory layer contacting the heating electrode layer. The resistive memory layer may include a wedge memory portion having a width that increases continuously in proportion with increasing distance from the heating electrode layer, and a body memory portion connected to the wedge memory portion such that the body memory portion and the wedge memory portion comprise an individual and continuous layer, the body memory portion having a greater width than the wedge memory portion.
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公开(公告)号：US10116505B2
公开(公告)日：2018-10-30
申请号：US14104720
申请日：2013-12-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-won Kim , Jae-woo Ko
Abstract: A method, a device, and a system enabling an external device to control a peripheral device by using device information stored in a network device. The device control method includes obtaining device information regarding the first peripheral device, wherein the obtaining is performed by the user device; transmitting the device information regarding the first peripheral device to the network device, wherein the transmitting is performed by the user device; storing the device information, wherein the storing is performed by the network device; and controlling the first peripheral device by using the device information, wherein the controlling is performed by a second peripheral device connected to the network device.
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