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公开(公告)号：US20250072064A1
公开(公告)日：2025-02-27
申请号：US18945603
申请日：2024-11-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyemi LEE , Seongjae GO , Hyeonjoo SONG , Sunjoong PARK , Hanyong PARK
Abstract: A semiconductor device including a peripheral circuit layer on a substrate; a lower stack and upper stack on the substrate; a stopper layer on the upper stack and including an insulating material; an upper mold layer on the stopper layer; a cell channel structure extending through the layers, a side surface of the cell channel structure contacting the stopper layer; first and second capping layers; a word line separation structure including a protrusion protruding toward the stopper layer; and a bit line contact plug connected to the cell channel structure, wherein an inner side surface of the stopper layer is offset from an inner side surface of the upper stack, and in contact with the word line separation structure.
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公开(公告)号：US20220199767A1
公开(公告)日：2022-06-23
申请号：US17468814
申请日：2021-09-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyemi LEE , Seongjae GO , Hyeonjoo SONG , Sunjoong PARK , Hanyong PARK
IPC: H01L29/06 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L25/065
Abstract: A semiconductor device including a peripheral circuit layer on a substrate; a lower stack and upper stack on the substrate; a stopper layer on the upper stack and including an insulating material; an upper mold layer on the stopper layer; a cell channel structure extending through the layers, a side surface of the cell channel structure contacting the stopper layer; first and second capping layers; a word line separation structure including a protrusion protruding toward the stopper layer; and a bit line contact plug connected to the cell channel structure, wherein an inner side surface of the stopper layer is offset from an inner side surface of the upper stack, and in contact with the word line separation structure.
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