公开(公告)号：US20180102280A1

公开(公告)日：2018-04-12

申请号：US15636889

申请日：2017-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Viet Ha NGUYEN ,  Nae In LEE ,  Thomas OSZINDA ,  Byung Hee KIM ,  Jong Min BAEK ,  Tae Jin YIM

IPC: H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/76814 ,  H01L21/76877 ,  H01L21/76888

Abstract: Methods for fabricating semiconductor devices may provide enhanced performance and reliability by recovering quality of a low-k insulating film damaged by a plasma process. A method may include forming a first interlayer insulating film having a trench therein on a substrate, filling at least a portion of the trench with a metal wiring region, exposing a surface of the metal wiring region and a surface of the first interlayer insulating film to a plasma in a first surface treatment process, then exposing the surface of the first interlayer insulating film to a recovery gas containing a methyl group (—CH3) in a second surface treatment process, and then forming an etch stop layer on the metal wiring region and the first interlayer insulating film.