公开(公告)号：US20200051912A1

公开(公告)日：2020-02-13

申请号：US16277597

申请日：2019-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Hee Lee ,  Hee-Sung Kam ,  Kyoung-Hoon Kim

IPC: H01L23/522 ,  H01L49/02 ,  H01L21/768

Abstract: A semiconductor device includes a substrate including a resistor region, a plurality of lower patterns in the resistor region, and a resistor line pattern on the plurality of lower patterns and the substrate of the resistor region. The plurality of lower patterns extend in a first direction parallel to a surface of the substrate and are spaced apart from each other in a second direction perpendicular to the first direction and parallel to the surface of the substrate. The resistor line pattern extends in the second direction. The resistor line pattern on the lower patterns has an upper surface and a lower surface protruding in a third direction perpendicular to the surface of the substrate.

公开(公告)号：US09288735B2

公开(公告)日：2016-03-15

申请号：US13934844

申请日：2013-07-03

Applicant: Samsung Electronics Co. Ltd.

Inventor： Ju-Yeop Kim ,  In-Yup Kang ,  Ki-Hyun Do ,  Jeong-Gyun Yu ,  Tae-Hee Lee ,  Dong-Hyun Choi

IPC: H04W72/00 ,  H04W36/30 ,  H04W36/14

CPC classification number: H04W36/30 ,  H04W36/14

Abstract: An apparatus and a method for switching a Radio Access Technology (RAT) by a User Equipment (UE) in a wireless communication system are provided. The method includes detecting an event indicating that the UE should perform a switching operation from a first RAT to a second RAT different from the first RAT occurs while the UE uses the first RAT determining whether a RAT switching operation criterion is satisfied after detecting that the event occurs and if the RAT switching operation criterion is satisfied, performing the switching operation.

Abstract translation: 提供了一种用于在无线通信系统中由用户设备（UE）切换无线接入技术（RAT）的装置和方法。 该方法包括检测指示UE应当执行从第一RAT到不同于第一RAT的第二RAT的切换操作的事件，同时UE在检测到事件之后使用第一RAT确定是否满足RAT切换操作标准 发生并且如果满足RAT切换操作标准，则执行切换操作。

公开(公告)号：US10825768B2

公开(公告)日：2020-11-03

申请号：US16277597

申请日：2019-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Hee Lee ,  Hee-Sung Kam ,  Kyoung-Hoon Kim

IPC: H01L29/00 ,  H01L21/20 ,  H01L23/522 ,  H01L21/768 ,  H01L49/02

Abstract: A semiconductor device includes a substrate including a resistor region, a plurality of lower patterns in the resistor region, and a resistor line pattern on the plurality of lower patterns and the substrate of the resistor region. The plurality of lower patterns extend in a first direction parallel to a surface of the substrate and are spaced apart from each other in a second direction perpendicular to the first direction and parallel to the surface of the substrate. The resistor line pattern extends in the second direction. The resistor line pattern on the lower patterns has an upper surface and a lower surface protruding in a third direction perpendicular to the surface of the substrate.

公开(公告)号：US10559585B2

公开(公告)日：2020-02-11

申请号：US15871478

申请日：2018-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung-Hoon Kim ,  Hong-Soo Kim ,  Tae-Hee Lee

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/11556 ,  H01L23/522

Abstract: A vertical memory device includes a conductive pattern structure on a first region of a substrate, the conductive pattern structure including a stack of interleaved conductive patterns and insulation layers. A pad structure is disposed on a second region of the substrate adjacent the first region of the substrate wherein edges of the conductive patterns are disposed at spaced apart points along a first direction to provide conductive pads arranged as respective steps in a staircase arrangement. A plurality of channel structures extends through the conductive pattern structure and a plurality of dummy channel structures extends through the pad structure. Respective contact plugs are disposed on the conductive pads. Numbers of the dummy channel structures per unit area passing through the conductive pads vary. Widths of the dummy channel structures passing through the conductive pads may also vary.