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1.发明申请SEMICONDUCTOR DEVICES INCLUDING A GATE STRUCTURE BETWEEN ACTIVE REGIONS, AND METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING A GATE STRUCTURE BETWEEN ACTIVE REGIONS 有权包括活性区域之间的门结构的半导体器件，以及形成活性区域之间的门结构的半导体器件的形成方法公开(公告)号：US20140070291A1
公开(公告)日：2014-03-13
申请号：US13957121
申请日：2013-08-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-Yong Song , Seung-Ho Kim , Ja-Young Lee , Jin-Woo Lee , Hyun-Mi Ji
IPC: H01L27/088 , H01L29/66
CPC classification number: H01L27/088 , H01L21/76224 , H01L21/76229 , H01L21/823481 , H01L27/10814 , H01L27/10823 , H01L27/10844 , H01L27/10855 , H01L27/10876 , H01L27/10894 , H01L29/66666
Abstract: Semiconductor devices are provided. The semiconductor devices may include an isolation pattern and first, second, and third active regions of a substrate. The first active region may be spaced apart from the second active region by a first width of the isolation pattern in a direction. A gate structure may be between the first and second active regions and may include a second width wider than the first width of the isolation pattern in the direction. Related methods of forming semiconductor devices are also provided.
Abstract translation: 提供半导体器件。 半导体器件可以包括衬底的隔离图案和第一，第二和第三有源区域。 第一有源区可以沿着一个方向与隔离图案的第一宽度与第二有源区间隔开。 栅极结构可以在第一和第二有源区之间，并且可以包括比隔离图案在该方向上的第一宽度宽的第二宽度。 还提供了形成半导体器件的相关方法。
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2.发明授权Semiconductor devices including a gate structure between active regions, and methods of forming semiconductor devices including a gate structure between active regions 有权包括有源区之间的栅极结构的半导体器件，以及形成半导体器件的方法，该半导体器件包括有源区之间的栅极结构公开(公告)号：US09093297B2
公开(公告)日：2015-07-28
申请号：US13957121
申请日：2013-08-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-Yong Song , Seung-Ho Kim , Ja-Young Lee , Jin-Woo Lee , Hyun-Mi Ji
IPC: H01L27/108 , H01L27/088 , H01L29/66 , H01L21/762 , H01L21/8234
CPC classification number: H01L27/088 , H01L21/76224 , H01L21/76229 , H01L21/823481 , H01L27/10814 , H01L27/10823 , H01L27/10844 , H01L27/10855 , H01L27/10876 , H01L27/10894 , H01L29/66666
Abstract: Semiconductor devices are provided. The semiconductor devices may include an isolation pattern and first, second, and third active regions of a substrate. The first active region may be spaced apart from the second active region by a first width of the isolation pattern in a direction. A gate structure may be between the first and second active regions and may include a second width wider than the first width of the isolation pattern in the direction. Related methods of forming semiconductor devices are also provided.
Abstract translation: 提供半导体器件。 半导体器件可以包括衬底的隔离图案和第一，第二和第三有源区域。 第一有源区可以沿着一个方向与隔离图案的第一宽度与第二有源区间隔开。 栅极结构可以在第一和第二有源区之间，并且可以包括比隔离图案在该方向上的第一宽度宽的第二宽度。 还提供了形成半导体器件的相关方法。
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