公开(公告)号：US20200161301A1

公开(公告)日：2020-05-21

申请号：US16726322

申请日：2019-12-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Uk Han ,  Taek Yong Kim ,  Satoru Yamada ,  Jun Hee Lim ,  Ki Jae Hur

IPC: H01L27/092 ,  H01L21/762 ,  H01L21/8238 ,  G11C11/408

Abstract: A semiconductor device includes first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps with each other in the second direction, a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction. The first active region is positioned between the second and third active regions in the second direction. The first and third active regions partially overlap in the second direction, and a device isolation film is configured to define the first to third active regions.

公开(公告)号：US10916543B2

公开(公告)日：2021-02-09

申请号：US16726322

申请日：2019-12-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Uk Han ,  Taek Yong Kim ,  Satoru Yamada ,  Jun Hee Lim ,  Ki Jae Hur

IPC: H01L27/088 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/762 ,  G11C11/408 ,  H01L29/423 ,  H01L23/522 ,  H01L23/528 ,  G11C11/4097 ,  H01L27/02

Abstract: A semiconductor device includes first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps with each other in the second direction, a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction. The first active region is positioned between the second and third active regions in the second direction. The first and third active regions partially overlap in the second direction, and a device isolation film is configured to define the first to third active regions.

公开(公告)号：US10515962B2

公开(公告)日：2019-12-24

申请号：US15827231

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Uk Han ,  Taek Yong Kim ,  Satoru Yamada ,  Jun Hee Lim ,  Ki Jae Hur

IPC: H01L27/092 ,  G11C11/408 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/423 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02 ,  G11C11/4097

Abstract: A semiconductor device includes first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps with each other in the second direction, a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction. The first active region is positioned between the second and third active regions in the second direction. The first and third active regions partially overlap in the second direction, and a device isolation film is configured to define the first to third active regions.

公开(公告)号：US20180294264A1

公开(公告)日：2018-10-11

申请号：US15827231

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Uk Han ,  Taek Yong Kim ,  Satoru Yamada ,  Jun Hee Lim ,  Ki Jae Hur

IPC: H01L27/092 ,  H01L21/8238 ,  H01L21/762

Abstract: A semiconductor device includes first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps with each other in the second direction, a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction. The first active region is positioned between the second and third active regions in the second direction. The first and third active regions partially overlap in the second direction, and a device isolation film is configured to define the first to third active regions.