公开(公告)号：US20140327056A1

公开(公告)日：2014-11-06

申请号：US14261822

申请日：2014-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-hwan Park ,  Je-min Park ,  Tai-heui Cho

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L21/28044 ,  H01L21/76831 ,  H01L21/76838 ,  H01L21/76877 ,  H01L27/10894 ,  H01L27/10897 ,  H01L29/4925

Abstract: A semiconductor device having a contact plug is manufactured. The semiconductor device includes a substrate having a cell array region and a peripheral circuit region, a gate electrode on the substrate, and an interlayer dielectric layer on the substrate. The interlayer dielectric layer has an upper surface having a first height.The device further comprises a contact hole extending through the interlayer dielectric layer and a contact plug having an upper surface and electrically connecting to the substrate in the contact hole. The upper surface of the contact plug has a second height lower than the first height. A spacer is on the sidewall of the contact hole. A first conductive line is on the spacer and the upper surface of the contact plug.

Abstract translation: 制造具有接触插头的半导体器件。 半导体器件包括具有单元阵列区域和外围电路区域的衬底，衬底上的栅极电极和衬底上的层间电介质层。 层间介电层具有第一高度的上表面。 该装置还包括延伸穿过层间电介质层的接触孔和具有上表面并在接触孔中电连接到基底的接触插塞。 接触塞的上表面具有比第一高度低的第二高度。 间隔件位于接触孔的侧壁上。 第一导线位于间隔件和接触插塞的上表面上。