公开(公告)号：US20190296017A1

公开(公告)日：2019-09-26

申请号：US16437784

申请日：2019-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： MIN HEE CHO ,  JUN SOO KIM ,  HUI JUNG KIM ,  TAE YOON AN ,  SATORU YAMADA ,  WON SOK LEE ,  NAM HO JEON ,  MOON YOUNG JEONG ,  KI JAE HUR ,  JAE HO HONG

IPC: H01L27/108 ,  H01L27/12 ,  H01L21/768

Abstract: A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.