公开(公告)号：US20190296017A1

公开(公告)日：2019-09-26

申请号：US16437784

申请日：2019-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： MIN HEE CHO ,  JUN SOO KIM ,  HUI JUNG KIM ,  TAE YOON AN ,  SATORU YAMADA ,  WON SOK LEE ,  NAM HO JEON ,  MOON YOUNG JEONG ,  KI JAE HUR ,  JAE HO HONG

IPC: H01L27/108 ,  H01L27/12 ,  H01L21/768

Abstract: A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.

公开(公告)号：US20220375941A1

公开(公告)日：2022-11-24

申请号：US17574666

申请日：2022-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KISEOK LEE ,  HUI-JUNG KIM ,  MIN HEE CHO

IPC: H01L27/108 ,  H01L29/786

Abstract: A semiconductor memory device including: a stack structure including a plurality of layers that are vertically stacked on a substrate, each of the plurality of layers including a word line, a channel layer, and a data storage element electrically connected to the channel layer; and a bit line that vertically extends on one side of the stack structure, wherein the word line includes: a first conductive line that extends in a first direction; and a gate electrode that protrudes in a second direction from the first conductive line, the second direction intersecting the first direction, wherein the channel layer is on the gate electrode, and wherein the bit line includes a connection part electrically connected to the channel layer.

公开(公告)号：US20230328961A1

公开(公告)日：2023-10-12

申请号：US17987011

申请日：2022-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： MIN HEE CHO ,  KISEOK LEE ,  WONSOK LEE

IPC: H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10897 ,  H01L27/10873

Abstract: A semiconductor device includes a first conductive line that extends in a first horizontal direction, a plurality of semiconductor patterns on the first conductive line and spaced apart from each other in the first horizontal direction wherein each of the semiconductor patterns includes a first vertical part and a second vertical part that are opposite to each other in the first horizontal direction, a second conductive line that extends in a second horizontal direction between the first vertical part and the second vertical part of each of the semiconductor patterns, the second horizontal direction intersecting the first horizontal direction, a gate dielectric pattern between the first vertical part and the second vertical part and between the second vertical part and the second conductive line, and a blocking pattern between neighboring semiconductor patterns.

公开(公告)号：US20230187548A1

公开(公告)日：2023-06-15

申请号：US17976955

申请日：2022-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： WONSOK LEE ,  MIN TAE RYU ,  SUNGWON YOO ,  KISEOK LEE ,  MIN HEE CHO

IPC: H01L29/78 ,  G11C5/06 ,  H01L29/08 ,  H01L29/10 ,  H01L27/105

CPC classification number: H01L29/7827 ,  G11C5/063 ,  H01L27/1052 ,  H01L29/0847 ,  H01L29/1033

Abstract: A semiconductor memory device includes bit lines disposed on a substrate and extending in a first direction in parallel to each other, a hydrogen supply insulating layer including hydrogen and filling a space between the bit lines, a source pattern located on each of the bit lines and being in partial contact with the hydrogen supply insulating layer, a hydrogen diffusion barrier layer covering a top surface of the hydrogen supply insulating layer and being in contact with a side surface of the source pattern, a first channel pattern located on the source pattern, a first word line being adjacent to a side surface of the first channel pattern and crossing over the bit lines, and a landing pad on the first channel pattern.

公开(公告)号：US20220246180A1

公开(公告)日：2022-08-04

申请号：US17481583

申请日：2021-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： WONSOK LEE ,  MIN TAE RYU ,  WOO BIN SONG ,  KISEOK LEE ,  MINSU LEE ,  MIN HEE CHO

IPC: G11C5/06 ,  H01L29/06 ,  H01L27/108

Abstract: A semiconductor memory includes a bit line extending in a first direction, first and second active patterns, which are alternately disposed in the first direction and on the bit line, and each of which includes a horizontal portion and a vertical portion, first word lines disposed on the horizontal portions of the first active patterns to cross the bit line, second word lines disposed on the horizontal portions of the second active patterns to cross the bit line, and an intermediate structure provided in a first gap region between the first and second word lines or in a second gap region between the vertical portions of the first and second active patterns. The first and second active patterns, which are adjacent to each other, may be disposed to be symmetric with respect to each other.

公开(公告)号：US20220013525A1

公开(公告)日：2022-01-13

申请号：US17172124

申请日：2021-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： MIN HEE CHO ,  HYUNMOG PARK ,  WOO BIN SONG ,  MINSU LEE ,  WONSOK LEE

IPC: H01L27/108

Abstract: A semiconductor memory device is provided. The device may include a lower gate line provided on a substrate and extended in a first direction, an upper gate line vertically overlapped with the lower gate line and extended in the first direction, a first capacitor provided between the lower gate line and the upper gate line, a second capacitor provided between the lower gate line and the upper gate line and spaced apart from the first capacitor in the first direction, a lower semiconductor pattern provided to penetrate the lower gate line and connected to the first capacitor, an upper semiconductor pattern provided to penetrate the upper gate line and connected to the second capacitor, and a lower insulating pattern provided between the second capacitor and the lower gate line to cover the entire region of a bottom surface of the second capacitor.

公开(公告)号：US20230337413A1

公开(公告)日：2023-10-19

申请号：US17981719

申请日：2022-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： MIN HEE CHO ,  MIN TAE RYU ,  Huije Ryu ,  SUNGWON YOO ,  Yongjin Lee ,  WONSOK LEE

IPC: H01L27/108 ,  G11C5/06

CPC classification number: H01L27/10814 ,  G11C5/063 ,  H01L27/10897 ,  H01L27/10888 ,  H01L27/10873 ,  H01L27/10885 ,  H01L27/10891

Abstract: Disclosed are semiconductor memory devices and their fabrication methods. The semiconductor memory device comprises a peripheral circuit structure including peripheral circuits on a semiconductor substrate and a first dielectric layer on the peripheral circuits, a cell array structure on the semiconductor substrate, and a shield layer between the peripheral circuit structure and the cell array structure. The cell array structure includes bit lines, first and second active patterns on the bit lines, first word lines that extend in a second direction on the first active patterns, second word lines that extend in the second direction on the second active patterns, data storage patterns on the first and second active patterns, and a second dielectric layer on the semiconductor substrate. A hydrogen concentration of the first dielectric layer is greater than that of the second dielectric layer.

公开(公告)号：US20230081793A1

公开(公告)日：2023-03-16

申请号：US18056954

申请日：2022-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WOO BIN SONG ,  SANG WOO LEE ,  MIN HEE CHO

IPC: H01L29/08 ,  H01L29/51 ,  H01L29/417 ,  H01L29/45 ,  H01L29/24 ,  H01L29/786 ,  H01L29/267

Abstract: Aspects of the present inventive concept provide a semiconductor device capable of enhancing performance and reliability through source/drain engineering in a transistor including an oxide semiconductor layer. The semiconductor device includes a substrate, a metal oxide layer disposed on the substrate, a source/drain pattern being in contact with the metal oxide layer and including a portion protruding from a top surface of the metal oxide layer, a plurality of gate structures disposed on the metal oxide layer with the source/drain pattern interposed therebetween and each including gate spacers and an insulating material layer, the insulating material layer being in contact with the metal oxide layer, and not extending along a top surface of the source/drain pattern, and a contact disposed on the source/drain pattern, the contact being connected to the source/drain pattern.