公开(公告)号：US20210063867A1

公开(公告)日：2021-03-04

申请号：US16845459

申请日：2020-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Akio Misaka ,  NOYOUNG CHUNG ,  WOONHYUK CHOI

IPC: G03F1/36 ,  G06F30/392 ,  G06F30/398 ,  G06F30/3953 ,  G06F30/367

Abstract: A method of manufacturing a semiconductor device includes randomly placing a plurality of standard cells from a library in which the standard cells are pre-stored, designing an interconnection pattern in which the standard cells are connected randomly to each other, connecting the standard cells according to the interconnection pattern to generate a virtual layout, performing an optical proximity correction operation on the virtual layout using an optical proximity correction (OPC) model, and forming and verifying a mask corresponding to the virtual layout on which the optical proximity correction operation is performed.