公开(公告)号：US20230244136A1

公开(公告)日：2023-08-03

申请号：US17963263

申请日：2022-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yong MOON ,  Won-Chan LEE

IPC: G03F1/36

CPC classification number: G03F1/36

Abstract: A method for fabricating a photomask layout is provided. The method includes: receiving a first layout including a main pattern; generating a second layout by generating an assist feature in consideration of optical properties of the main pattern in the first layout; generating a third layout by performing optical proximity correction (OPC) on a second layout; and outputting the third layout to a corrected layout when the assist feature is not generated on an ACI image of a semiconductor film etched by using a photomask generated using the third layout, as an etching mask.