公开(公告)号：US10707071B2

公开(公告)日：2020-07-07

申请号：US15826916

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd

Inventor： Won-Ho Jang ,  Hyun-Jung Lee ,  Se-Jin Park ,  Yong-Sun Ko ,  Dong-Gyun Han ,  Woo-Gwan Shim ,  Jeong-Yong Bae ,  Woo-Young Kim ,  Boong Kim

IPC: F26B7/00 ,  H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  H01L21/687 ,  B08B3/08

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

公开(公告)号：US11361960B2

公开(公告)日：2022-06-14

申请号：US16892478

申请日：2020-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Ho Jang ,  Jeong-Yong Bae ,  Woo-Young Kim ,  Hyun-Jung Lee ,  Se-Jin Park ,  Yong-Sun Ko ,  Dong-Gyun Han ,  Woo-Gwan Shim ,  Boong Kim

IPC: F26B25/06 ,  H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  H01L21/687 ,  B08B3/08

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.