公开(公告)号：US11361960B2

公开(公告)日：2022-06-14

申请号：US16892478

申请日：2020-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Ho Jang ,  Jeong-Yong Bae ,  Woo-Young Kim ,  Hyun-Jung Lee ,  Se-Jin Park ,  Yong-Sun Ko ,  Dong-Gyun Han ,  Woo-Gwan Shim ,  Boong Kim

IPC: F26B25/06 ,  H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  H01L21/687 ,  B08B3/08

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

公开(公告)号：US10707071B2

公开(公告)日：2020-07-07

申请号：US15826916

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd

Inventor： Won-Ho Jang ,  Hyun-Jung Lee ,  Se-Jin Park ,  Yong-Sun Ko ,  Dong-Gyun Han ,  Woo-Gwan Shim ,  Jeong-Yong Bae ,  Woo-Young Kim ,  Boong Kim

IPC: F26B7/00 ,  H01L21/02 ,  H01L21/67 ,  B08B7/00 ,  H01L21/687 ,  B08B3/08

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

公开(公告)号：US11935952B2

公开(公告)日：2024-03-19

申请号：US17945921

申请日：2022-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Doo Jeon ,  Han-Wool Park ,  Se-Jin Park ,  No-Young Chung

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/76224 ,  H01L29/66545 ,  H01L29/66795

Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.

公开(公告)号：US11469325B2

公开(公告)日：2022-10-11

申请号：US16393234

申请日：2019-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Doo Jeon ,  Han-Wool Park ,  Se-Jin Park ,  No-Young Chung

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/762 ,  H01L29/66

Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.

公开(公告)号：US09470972B2

公开(公告)日：2016-10-18

申请号：US14642660

申请日：2015-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Doo Kim ,  Se-Jin Park ,  Suk-Joo Lee

IPC: H01L21/302 ,  G03F1/26 ,  G03F1/28 ,  H01L21/308

CPC classification number: G03F1/26 ,  G03F1/28 ,  G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  H01L21/3086

Abstract: A mask for photolithography and methods of manufacturing a mask and a semiconductor device are provided. The method of manufacturing a mask may comprise providing a substrate, forming a phase shift material layer on the substrate, forming a light blocking layer on the phase shift material layer, and forming a main pattern and a sub pattern on the substrate by patterning the phase shift material layer and the light blocking layer. The light blocking layer may be removed on the main pattern left on the light blocking layer remaining on the sub pattern. A semiconductor device may be manufactured using the mask to form a photoresist pattern on a semiconductor wafer. The pattern of the photoresist may be used to etch an object layer of the semiconductor wafer.

Abstract translation: 提供了用于光刻的掩模和制造掩模和半导体器件的方法。 制造掩模的方法可以包括提供衬底，在衬底上形成相移材料层，在相移材料层上形成光阻挡层，以及通过对相位进行图案化来在衬底上形成主图案和子图案 移位材料层和遮光层。 可以在保留在子图案上的遮光层上留下的主图案上去除遮光层。 可以使用掩模制造半导体器件，以在半导体晶片上形成光致抗蚀剂图案。 光致抗蚀剂的图案可以用于蚀刻半导体晶片的物体层。