公开(公告)号：US20250081526A1

公开(公告)日：2025-03-06

申请号：US18656949

申请日：2024-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin SHIN ,  Woncheol JEONG ,  Heonjong SHIN

IPC: H01L29/417 ,  H01L23/528 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: An integrated circuit device may includes a plurality of device isolation layers extending lengthwise in a first horizontal direction, a plurality of gap-fill insulation layers arranged apart from one another in the first horizontal direction, a plurality of gate structures extending lengthwise in a second horizontal direction perpendicular to the first horizontal direction and on the plurality of gap-fill insulation layers, a first source/drain region and a second source/drain region respectively disposed at both sides of a first gate structure among the plurality of gate structures with respect to the first horizontal direction, an insulation block under the first source/drain region, and an insulation barrier between the first source/drain region and the insulation block. The insulation barrier may cover a lower surface of the first source/drain region.