公开(公告)号：US20170084481A1

公开(公告)日：2017-03-23

申请号：US15273797

申请日：2016-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woochoel NOH ,  Wonkyu HAN ,  Hyeoksang OH ,  Naein LEE ,  Gyeongyun HAN

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/02068 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/76814 ,  H01L21/76825

Abstract: A method of fabricating a semiconductor device including an interlayer insulating layer and interconnections is provided. An interlayer insulating layer is formed on a substrate. An opening is formed in the interlayer insulating layer. A degassing process is performed by irradiating the interlayer insulating layer having the opening with microwaves. A K-value recovery process is performed by irradiating the interlayer insulating layer having the opening with UV light. A conductive layer is formed in the opening. The degassing process and the K-value recovery process are performed as an in-situ process.