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公开(公告)号:US20170084719A1
公开(公告)日:2017-03-23
申请号:US15229930
申请日:2016-08-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hoyoung KIM , SANG WON BAE , Jae-Jik BAEK , Wonsang CHOI
IPC: H01L29/66 , C09K13/00 , H01L21/3213 , H01L21/28 , H01L21/3205
CPC classification number: H01L29/66545 , C09K13/00 , H01L21/28017 , H01L21/28255 , H01L21/32055 , H01L21/32134 , H01L29/66553 , H01L29/66795 , H01L29/7848
Abstract: The present disclosure relates to an etchant, a method of making an etchant, an etching method and a method of fabricating a semiconductor device using the same. The etching method includes supplying an etchant on an etch-target layer to etch the etch-target layer in a wet etch manner. The etchant contains a basic compound and a sugar alcohol, and the basic compound contains ammonium hydroxide or tetraalkyl ammonium hydroxide. In the etchant, the sugar alcohol has 0.1 to 10 parts by weight for every 100 parts by weight of the basic compound.