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公开(公告)号：US20250069682A1
公开(公告)日：2025-02-27
申请号：US18665817
申请日：2024-05-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wonyoung Jang , Taewon Kim , Sanghee Kang , Taeyun Kim
Abstract: A memory device including a repair circuit and an operating method of the memory device are provided. The operating method includes outputting a signal representing a pre-decoded faulty row address based on predecoding a faulty row address, outputting a signal representing a pre-decoded row address based on predecoding a row address, outputting hit signals based on comparing a bit value of the pre-decoded faulty row address with a bit value of the pre-decoded row address, outputting a repair enable signal based on the hit signals, and performing a row repair operation based on the repair enable signal.
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