公开(公告)号：US10211396B2

公开(公告)日：2019-02-19

申请号：US15943698

申请日：2018-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhyun Kim ,  Kiwoong Kim ,  Sechung Oh ,  Woochang Lim

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.