公开(公告)号：US09159751B2

公开(公告)日：2015-10-13

申请号：US14088793

申请日：2013-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Taek Lee ,  Sang-Il Jung ,  Yi-Tae Kim ,  Woon-Phil Yang

IPC: H01L29/768 ,  H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

Abstract: A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the floating diffusion region, which is located in the active region. The transfer gate includes first and second portions divided relative to a reference line, and at least one of the first or second portions does not overlap the isolation region.

Abstract translation: 图像传感器的单位像素包括光电转换区域，浮动扩散区域和传输门极。 光电转换区域由半导体衬底的隔离区限定的有源区。 光电转换区域产生与入射光对应的电荷。 传输门将电荷传送到位于有源区域中的浮动扩散区域。 传输门包括相对于参考线分开的第一和第二部分，并且第一或第二部分中的至少一个不与隔离区重叠。