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    Image sensors having reduced interference between pixels
    1.
    发明授权
    Image sensors having reduced interference between pixels 有权
    具有减小像素间干扰的图像传感器

    公开(公告)号：US09443898B2

    公开(公告)日：2016-09-13

    申请号：US14595336

    申请日：2015-01-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Kyung-Ho Lee ,  Jun-Suk Lee

    IPC: H01L29/49 ,  H01L27/146 ,  H04N5/357 ,  H04N5/3745

    CPC classification number: H01L27/14641 ,  H01L27/14603 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/37457

    Abstract: An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

    Abstract translation: 图像传感器包括在列方向上的第一像素区域中彼此相邻布置的第一像素和第一源极跟随器晶体管，以及第二像素和第二源极跟随器晶体管，其形成在与第二像素区域相邻的第二像素区域中 第一像素区域在行方向上具有相同数量的第一像素，其中当第一像素共享第一源极跟随器晶体管并且第二像素共享第二源极跟随器晶体管时，当从相同行选择的像素被激活时， 第一源极跟随器晶体管和第二源极跟随器晶体管被激活，使得它们的位置具有对角对称性。

    Unit Pixels for Image Sensors and Pixel Arrays Comprising the Same
    2.
    发明申请
    Unit Pixels for Image Sensors and Pixel Arrays Comprising the Same 有权
    图像传感器和像素阵列的单位像素包括它

    公开(公告)号：US20160056200A1

    公开(公告)日：2016-02-25

    申请号：US14615536

    申请日：2015-02-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung-Wook Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Young-Woo Jung

    IPC: H01L27/146 ,  H04N5/3745

    CPC classification number: H04N5/3745 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/359 ,  H04N5/37457

    Abstract: Provided are unit pixels for image sensors and pixel arrays including the same. The unit pixels include a first pixel including first and second photo diodes which are adjacent to each other, and a first deep trench isolation (DTI) fully surrounding sides of the first and second photo diodes and electrically separating the first pixel from other pixels adjacent to the first pixel. The first pixel includes a second DTI positioned between the first photo diode and the second photo diode and having one side formed to be spaced apart from the first DTI. The first pixel also includes a color filter positioned on the first and second photo diodes and fully overlapping the first and second photo diodes. The first pixel further includes a floating diffusion node electrically connected with the first and second photo diodes. The first and second photo diodes share one floating diffusion node.

    Abstract translation: 提供了用于图像传感器和包括其的像素阵列的单位像素。 单位像素包括包括彼此相邻的第一和第二光电二极管的第一像素和完全围绕第一和第二光电二极管的第一深沟槽隔离（DTI），并且将第一像素与与 第一个像素。 第一像素包括位于第一光电二极管和第二光电二极管之间并且具有形成为与第一DTI间隔开的一侧的第二DTI。 第一像素还包括位于第一和第二光电二极管上并与第一和第二光电二极管完全重叠的滤色器。 第一像素还包括与第一和第二光电二极管电连接的浮动扩散节点。 第一和第二光电二极管共享一个浮动扩散节点。

    Unit pixel of image sensor and image sensor including the same
    3.
    发明授权
    Unit pixel of image sensor and image sensor including the same 有权
    图像传感器和图像传感器的单位像素包括相同

    公开(公告)号：US09159751B2

    公开(公告)日：2015-10-13

    申请号：US14088793

    申请日：2013-11-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jun-Taek Lee ,  Sang-Il Jung ,  Yi-Tae Kim ,  Woon-Phil Yang

    IPC: H01L29/768 ,  H01L27/146

    CPC classification number: H01L27/14605 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

    Abstract: A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the floating diffusion region, which is located in the active region. The transfer gate includes first and second portions divided relative to a reference line, and at least one of the first or second portions does not overlap the isolation region.

    Abstract translation: 图像传感器的单位像素包括光电转换区域，浮动扩散区域和传输门极。 光电转换区域由半导体衬底的隔离区限定的有源区。 光电转换区域产生与入射光对应的电荷。 传输门将电荷传送到位于有源区域中的浮动扩散区域。 传输门包括相对于参考线分开的第一和第二部分，并且第一或第二部分中的至少一个不与隔离区重叠。

    Image sensor and methods of manufacturing the same
    4.
    发明授权
    Image sensor and methods of manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号：US09559138B2

    公开(公告)日：2017-01-31

    申请号：US14878631

    申请日：2015-10-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yi-Tae Kim ,  Kyung-Ho Lee ,  Dong-Young Jang ,  Sung-Ho Choi

    IPC: H01L31/062 ,  H01L31/113 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

    Abstract: An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.

    Abstract translation: 图像传感器包括第一基板，光电二极管阵列，第一布线结构，第二布线结构，第三布线结构和遮光层图案。 光电二极管阵列设置在第一基板中。 光电二极管阵列包括第一区域中的第一光电二极管，第二区域中的第二光电二极管和第三区域中的第三光电二极管。 第一布线结构设置在第一区域中。 第一布线结构电连接到第一光电二极管。 第二布线结构设置在第二区域中。 第二布线结构包括电源布线。 第三布线结构设置在第三区域中。 第三布线结构电连接到第三光电二极管。 遮光层图案设置在第一基板上。 遮光层图案覆盖第三区域和第四区域。

    PIXEL ARRAY INCLUDED IN IMAGE SENSOR AND IMAGE SENSOR INCLUDING THE SAME
    5.
    发明申请
    PIXEL ARRAY INCLUDED IN IMAGE SENSOR AND IMAGE SENSOR INCLUDING THE SAME 审中-公开

    公开(公告)号：US20190221600A1

    公开(公告)日：2019-07-18

    申请号：US16175097

    申请日：2018-10-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Yu-Jung Choi

    IPC: H01L27/146 ,  H04N5/357

    Abstract: A pixel array in an image sensor includes a first pixel group. The first pixel group includes unit pixels that include photoelectric conversion units and a first signal generation unit shared by the photoelectric conversion units. The first signal generation unit includes transfer transistors connected to the photoelectric conversion units, respectively, a first floating diffusion node connected to the transfer transistors, a plurality of driving transistors connected to the first floating diffusion node and connected in parallel with one another, and a plurality of selection transistors connected in parallel between a first output terminal and the plurality of driving transistors. The first output terminal outputs pixel signals that correspond to photo charges collected by the photoelectric conversion units, respectively. A number of the plurality of selection transistors is equal to a number of the plurality of driving transistors.

    Pixel array included in image sensor and image sensor including the same
    6.
    发明授权
    Pixel array included in image sensor and image sensor including the same 有权

    公开(公告)号：US10573682B2

    公开(公告)日：2020-02-25

    申请号：US16175097

    申请日：2018-10-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Yu-Jung Choi

    IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146 ,  H04N5/357

    Abstract: A pixel array in an image sensor includes a first pixel group. The first pixel group includes unit pixels that include photoelectric conversion units and a first signal generation unit shared by the photoelectric conversion units. The first signal generation unit includes transfer transistors connected to the photoelectric conversion units, respectively, a first floating diffusion node connected to the transfer transistors, a plurality of driving transistors connected to the first floating diffusion node and connected in parallel with one another, and a plurality of selection transistors connected in parallel between a first output terminal and the plurality of driving transistors. The first output terminal outputs pixel signals that correspond to photo charges collected by the photoelectric conversion units, respectively. A number of the plurality of selection transistors is equal to a number of the plurality of driving transistors.

    IMAGE SENSORS HAVING REDUCED INTERFERENCE BETWEEN PIXELS
    8.
    发明申请
    IMAGE SENSORS HAVING REDUCED INTERFERENCE BETWEEN PIXELS 有权
    具有像素之间降低干扰的图像传感器

    公开(公告)号：US20150333091A1

    公开(公告)日：2015-11-19

    申请号：US14595336

    申请日：2015-01-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Kyung-Ho Lee ,  Jun-Suk Lee

    IPC: H01L27/146

    CPC classification number: H01L27/14641 ,  H01L27/14603 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/37457

    Abstract: An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

    Abstract translation: 图像传感器包括在列方向上的第一像素区域中彼此相邻布置的第一像素和第一源极跟随器晶体管，以及第二像素和第二源极跟随器晶体管，其形成在与第二像素区域相邻的第二像素区域中 第一像素区域在行方向上具有相同数量的第一像素，其中当第一像素共享第一源极跟随器晶体管并且第二像素共享第二源极跟随器晶体管时，当从相同行选择的像素被激活时， 第一源极跟随器晶体管和第二源极跟随器晶体管被激活，使得它们的位置具有对角对称性。

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