公开(公告)号：US20170194158A1

公开(公告)日：2017-07-06

申请号：US15398776

申请日：2017-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Kwan YU ,  Woonki SHIN ,  Moonhan PARK ,  DongSuk SHIN ,  HanJin LIM

IPC: H01L21/306 ,  H01L21/8234 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02057 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481

Abstract: An etching method is disclosed. The etching method comprises providing on a substrate a structure comprising a recess region formed therein. The recess region includes an inner part and a mouth part whose width is less than that of the inner part. The etching method further comprises performing a clean-then-etch process to remove at least a portion of etching object formed outside the recess region. The performing a clean-then-etch process comprises performing a cleaning process to fill at least a portion of the recess region with a cleaning solution, and performing a wet etch process to the substrate in a state that the cleaning solution remains in the recess region.