METHOD OF INSPECTING SEMICONDUCTOR DEVICE
    2.
    发明公开

    公开(公告)号:US20230266258A1

    公开(公告)日:2023-08-24

    申请号:US18113121

    申请日:2023-02-23

    IPC分类号: G01N23/2251

    摘要: A method of inspecting a semiconductor device includes charging an inspection region of a semiconductor device using a charging electron beam, and scanning the inspection region using a scanning electron beam. The charging of the inspection region includes dividing the inspection region into a charging region and a non-charging region, and charging the charging region using the charging electron beam. The scanning of the inspection region includes irradiating the scanning electron beam to the inspection region, and detecting secondary electrons emitted from the inspection region by the scanning electron beam.